Doping Elements
Doping elements is the most direct way to change the resistivity of single crystal silicon. By introducing other elements (such as Boron B, Gallium Ga, Phosphorus P, Antimony Sb, and Arsenic As) into a silicon crystal, its resistivity can be significantly altered. These doping elements introduce shallow energy levels of the donor or receiver in silicon, helping electrons or holes to jump from the valence band to the conduction band more easily, thus reducing or increasing resistivity.
Temperature
There is a complex relationship between the resistivity of silicon and temperature. In the low-temperature phase, the intensity of impurity ionisation increases with increasing temperature, leading to an increase in carrier concentration and a decrease in resistivity with increasing temperature. However, as the temperature rises further, intrinsic excitation becomes dominant and the production of large numbers of intrinsic carriers outweighs the effect of reduced mobility on resistivity, leading to a sharp decrease in resistivity with temperature.
Crystal Defects
Lattice defects, such as point defects, line defects, and facet defects, cause changes in the local resistivity of silicon single crystal rods because these defects result in blocked electron motion.
Grain boundaries
Grain boundaries are the interfaces between two grains, and the presence of grain boundaries results in the restricted movement of electrons in the vicinity of the grain boundaries, leading to a local increase in resistivity.
Oxygen sizers
At certain temperatures, oxygen sizers are converted to negatively charged oxygen sizers, which affects the resistivity of single crystal silicon.
Thickness
Thickness corrections are also critical to obtaining the true resistivity, as variations in thickness affect the resistivity measurement.
